p-n junction diodes fabricated using poly (3-hexylthiophene-2,5-dyil) thin films and nanofibers

Shamir Maldonado-Rivera

Abstract


Poly (3-hexylthiophene-2,5-dyil) (P3HT) is a p-type semiconducting polymer which is commonly used in electronic devices. A p-n junction diode is an essential electronic device found in all power supplies that are used to charge cellular telephones. Using an n-doped silicon substrate together with films or nanofibers of P3HT, we fabricated and characterized p-n junction diodes. P3HT films were prepared via drop casting a 2 wt % P3HT solution in chloroform, while P3HT nanofibers were fabricated using the electrospinning technique. The diodes were electrically characterized in air and in vacuum, with and without ultraviolet (UV) exposure. The diodes fabricated using films had a higher rectification ratio and lower turn on voltage compared to those fabricated using nanofibers. Exposure to UV resulted in a higher rectification ratio, and the changes were not reversible. The diode made from the P3HT film was also successfully tested as a half wave rectifier, and the rectification efficiency was 14%. These diodes therefore have the potential to be used as a rectifier and a UV sensor, rendering them multifunctional.


Keywords


P3HT; p-n junction diodes; UV; rectifiers

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